Silicon nanowires grown by molecular beam epitaxy

(based on) Schubert, Werner, Gösele et al Appl. Phys. Lett. 84, 357 (2004)

Forschung » Halbleitende Nanodrähte

Halbleitende Nanodrähte

Zusammenfassung

This project deals with the controlled growth, the characterization, the properties and potential applications of semiconductor nanowires and nanocrystals in areas such as electronics, photonics, sensorics, and photovoltaics for alternative energy generation. Depending on the size of the structures quantum effects become an essential tool to tailor the desired electronic properties.
Semiconductor materials form the basis of modern micro- and nano-electronic chip, optoelectronics devices and many sensors. Life in a modern society without electronic chips in computers, mobile phones, and cars is hardly imaginable. Continuing device shrinking as expressed in Moore’s law is accomplished by a top-down approach involving lithographic techniques. A potential limit of this scaling approach might occur in the range of about ten nanometers or even below.
All major semiconductor companies work on alternatives beyond this limit. In the last five years the major contenders for potential structures beyond normal microelectronics have turned out to be carbon nanotubes and semiconductor nanowires. The area of semiconductor nanowires for nanoelectronic devices has especially been pushed by US research groups, e.g. by the group of Charles Lieber at Harvard University. In Europe, it was only recently noticed that this is a scientifically and technologically critically important area. Based on the experience of early work on silicon quantum wires by one of the principal investigators the DFG Priority Program 1165, Nanowires and Nanotubes was initiated by Dr. Margit Zacharias.
The growth of semiconductor nanowires can be accomplished by a number of different methods, such as chemical vapor deposition (Christiansen). The vapor-liquid-solid method, as originally developed about forty years ago and appropriately modified in recent years, allows the growth of nanowires with diameters down to a few nanometers.

(letzte Änderung: 07.12.2011, 08:59 Uhr)