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PD Dr. Michael Hanke
Geförderte Projekte im Exzellenzcluster (07/2005-06/2008)
Arbeitsgebiete
- Self-organization at low-dimensional structures,
- X-ray scattering techniques,
- Application of synchrotron radiation in materials research,
- Numerical finite element simulations on the quasi-static and dynamic behavior at the nanometer scale
Publikationen
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M.Hanke, C.Eisenschmidt, P.Werner, N.Zakharov, P.Schäfer, O.Konovalov,
"Strain relaxation in heteroepitaxial SiGe/Si whiskers "
Phys. Rev. B 75, 161303(R) (2007)
 Link»
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M.Hanke, T.Boeck, A.-K.Gerlitzke, F.Syrowatka, F.Heyroth,
"Elastic strain relaxation in discontinuous wetting layers and its impact on lateral ordering of heteroepitaxial dots",
Phys. Rev. B 74, 153304 (2006) Link»
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M.Hanke, M.Schmidbauer, D.Grigoriev, P.Schäfer, R.Köhler, T.H.Metzger, Zh.M.Wang, Yu.I.Mazur, G.J.Salamo,
"Zero-strain GaAs quantum dot molecules as investigated by x-ray diffuse scattering",
Appl. Phys. Lett. 89, 053116 (2006) Link»
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M. Hanke, T. Boeck, A.-K. Gerlitzke,
"Template-based assembling of SiGe/Si(001) islands by local anodic oxidation",
Appl. Phys. Lett., 88, 173106 (2006) Link»
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M.Hanke, T.Boeck, A.-K.Gerlitzke, F.Syrowatka, F.Heyroth,
"Dedicated fabrication of silicon-based ensembles of dot molecules with a specific and unique number of dots",
Appl. Phys. Lett. 88, 063119 (2006) Link»
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M.Hanke, T.Boeck, A.-K.Gerlitzke, F.Syrowatka, F.Heyroth,
"Unidirectional self-assembling of SiGe Stranski-Krastanow islands on Si(113)",
Appl. Phys. Lett. 86, 223109 (2005) Link»
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M.Hanke, T.Boeck, A.-K.Gerlitzke, F.Syrowatka, F.Heyroth, R.Köhler,
"Size, shape and ordering of LPE-SiGe/Si(001) islands grown under far non-equilibrium growth conditions",
Appl. Phys. Lett. 86, 142101 (2005), cover image Link»
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M.Hanke, D.Grigoriev, M.Schmidbauer, P.Schäfer, R.Köhler, R.L.Sellin, U.W.Pohl, D.Bimberg,
"Vertical composition gradient in InGaAs/GaAs alloy quantum dots as revealed by high resolution x-ray diffraction",
Appl. Phys. Lett. 85, 3062 (2004) Link»
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M.Hanke, M.Schmidbauer, R.Köhler, F.Syrowatka, A.-K.Gerlitzke, T.Boeck,
"Equilibrium shape of SiGe Stranski-Krastanow islands on silicon grown by liquid phase epitaxy",
Appl. Phys. Lett. 84, 5228 (2004) Link»
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M.Hanke, H.Raidt, R.Köhler, H.Wawra,
"Island chain formation during liquid phase epitaxy of SiGe on silicon",
Appl. Phys. Lett. 83, 4927 (2003) Link»
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M.Hanke, M.Schmidbauer, D.Grigoriev, H.Raidt, P.Schäfer, R.Köhler, A.-K.Gerlitzke, H.Wawra,
"SiGe/Si(001) Stranski-Krastanov islands by liquid-phase epitaxy: Diffuse x-ray scattering versus growth observations",
Phys. Rev. B 69, 075317 (2004) Link»
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M.Hanke, M.Schmidbauer, R.Köhler,
"Lateral correlation of SiGe Stranski-Krastanow islands on silicon as probed by high resolution x-ray diffraction",
Jour. Appl. Phys. 96, 1959 (2004) Link»
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M.Hanke, M.Schmidbauer, D.Grigoriev, R.Köhler,
"Aspect ratio of LPE-SiGe/Si(001) islands as probed by high resolution x-ray diffraction",
Jour. Appl. Phys. 96, 1447 (2004) Link»
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M.Hanke, M.Schmidbauer, R.Köhler, H.Kirmse, M.Pristovsek,
"Lateral short range ordering of step bunches in MOCVD grown InGaAs/GaAs superlattices",
Jour. Appl. Phys. 95, 1736 (2004) Link»
(letzte Änderung: 04.07.2023, 13:34 Uhr)
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